PTF141501E V1

PTF141501E Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E is a 150-watt, GOLDMOS ® FET intended for DAB applications. This device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. Features DAB Drive-up at 28 Volts 35 -20 30 -25 -30 Regrowth 20 -35 Efficiency 15 -40 10 -45 5 -50 Spectral Regrowth (dBc) Drain Efficiency (%) VDD = 28 V, f = 1500 MHz, IDQ = 1.5 A, DAB mode 2 25 PTF141501E Package H-30260-2 • Thermally-enhanced package, pB-free and RoHS-compliant • Broadband internal matching • Typical DAB Mode 2 performance at 1500 MHz, 32 V - Average output power = 50 W - Efficiency = 28% - Spectral regrowth = –30 dBc - ∆ 975 kHz fC • Typical DAB Mode 2 performance at 1500 MHz, 28 V - Average output power = 40 W - Efficiency = 26% - Spectral regrowth = –31 dBc - ∆ 975 kHz fC • Typical CW performance, 1500 MHz, 28 V - Minimum output power = 150 W - Linear gain = 16.5 dB - Efficiency = 48% at P–1dB • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR at 28 V, 150 W (CW) output power -55 0 0 10 20 30 40 50 60 Output Power (W) Average RF Characteristics DAB Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 32 V, IDQ = 1.5 A, POUT = 50 WAVG, f = 1500 MHz, DAB Mode 2, fC ∆ 975 kHz Characteristic Symbol Min Typ Max Unit RGTH — –30 — dBc Gain Gps — 16.5 — dB Drain Efficiency ηD — 29 — % Spectral Regrowth All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 12 Rev. 04, 2008-02-13 PTF141501E RF Characteristics (cont.) Two-Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1.5 A, POUT = 150 WPEP, f = 1500 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 15.0 16.5 — dB Drain Efficiency ηD 35 — — % Intermodulation Distortion IMD — –30 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.07 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 1.5 A VGS 2.5 3.3 4.0 V Gate Leakage Current VGS = +10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 438 W 2.5 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RθJC 0.4 °C/W Ordering Information Type Package Outline Package Description Marking PTF141501E H-30260-2 Thermally-enhanced slotted flange, single-ended PTF141501E *See Infineon distributor for future availability. Data Sheet 2 of 12 Rev. 04, 2008-02-13 PTF141501E CW Sweep in a Broadband Test Fixture VDD = 28 V, IDQ = 1.5 A, POUT (CW) = 30 W -20 30 -25 25 -30 Efficiency -35 Regrowth 15 -40 10 -45 5 -50 -55 0 0 10 20 30 40 50 60 Drain Efficiency 25 -5 20 -10 15 -15 Gain 10 -20 Return Loss -25 5 0 1400 1450 1500 -30 1600 1550 Output Power (W) Average Frequency (MHZ) CW Sweep for Varying Bias Conditions Intermodulation Distortion Products vs. Output Power VDD = 28 V, f = 1500 MHz VDD = 28, IDQ = 1.5 A, f = 1.5 GHz, tone spacing = 1 MHz 17 Intermodulation Distortion (dBc) -25 IDQ = 1.5 A Gain (dB) 0 IDQ = 1.2 A 16 IDQ = 0.9 A IDQ = 0.6 A 15 14 1 10 100 -30 -35 35 Drain Efficiency -40 1000 IM5 -45 25 -50 -55 15 IM7 -60 -65 0 20 40 60 80 5 100 Output Power (W) Average Output Power (W) CW Data Sheet 45 IM3 Drain Efficiency (%) . 20 30 Input Return Loss (dB) 35 Gain (dB) and Drain Efficiency (%) . DAB Drive-up at 32 Volts VDD = 32, IDQ = 1.5 A, f = 1500 MHz, DAB Mode 2 Spectral Regrowth (dBc) Drain Efficiency (%) . Typical Performance 3 of 12 Rev. 04, 2008-02-13 PTF141501E Typical Performance (cont.) Intermodulation Distortion vs. Output Power for Various I DQ Bias Voltage vs. Temperature Voltage normalized to typical gate voltage. Series show current. VDD = 28, f = 1.5 GHz -25 -30 Normalized Bias Voltage IDQ = 1.1 A IM3 (dBc) -35 -40 -45 IDQ = 1.3 A -50 IDQ = 1.5 A -55 -60 IDQ = 1.7 A -65 IDQ = 1.9 A -70 0 50 100 1.04 0.90 A 1.03 2.10 A 1.02 4.50 A 1.01 7.50 A 1.00 10.50 A 0.99 13.50 A 0.98 0.97 0.96 0.95 -20 150 0 Output Power (W) Average 20 40 60 80 100 Case Temperature (ºC) D GE NE Broadband Circuit Impedance, 1500 MHz D Z Source Z0 = 50 Ω Z Load 0.1 Z Load 1600 MHz R jX R jX 1400 5.00 –6.70 0.94 1.27 1450 4.50 –5.90 0.90 1.73 1500 4.20 –5.10 0.86 2.21 1550 3.90 –4.30 0.82 2.60 1600 3.70 –3.70 0.80 3.05 Data Sheet 4 of 12 0.2 1400 MHz Z Source 1600 MHz 0.1 1400 MHz --- MHz D LOA D S T OW AR NGT H Z Load Ω ELE WAV Z Source Ω Frequency 0 .0 S 0.1 G Rev. 04, 2008-02-13 PTF141501E Reference Circuit for 1500 MHz C1 0.001µF R2 1.3K V R1 1.2K V QQ1 LM7805 Q1 VDD Q1 BCP56 C2 0.001µF R3 2K V C3 0.001µF R4 2K V R5 5.1K V C4 10µF 35V R6 10 V C5 0.1µF L1 R7 5.1K V C10 13pF C6 7.5pF l6 l1 C12 0.1µF C19 33pF DUT l2 V DD C13 10µF 35V l7 C7 33pF RF_IN C11 1µF l3 l4 C8 0.3pF C9 2.4pF l5 l9 l10 l11 l12 l13 C18 0.7pF l8 l14 RF_OUT C20 0.3pF L2 C14 13pF C15 1µF C16 0.1µF C17 10µF 35V 141501a-1500_sch Reference Circuit Schematic for 1500 MHz Circuit Assembly Information DUT PTF141501E PCB 0.76 mm [0.030"] thick, εr = 4.5 Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 l13 l14 LDMOS Transistor TMM4 Electrical Characteristics at 1500 MHz 1 Dimensions: L x W (mm) 0.043 λ, 50.0 Ω 4.67 x 1.47 0.118 λ, 42.0 Ω 12.70 x 1.85 0.015 λ, 42.0 Ω 1.57 x 1.85 0.012 λ, 14.7 Ω 1.22 x 7.57 0.052 λ, 8.0 Ω 5.08 x 15.19 0.182 λ, 60.0 Ω 20.17 x 0.97 0.283 λ, 63.0 Ω 31.45 x 0.89 0.283 λ, 63.0 Ω 31.45 x 0.89 0.026 λ, 4.6 Ω 2.46 x 27.89 0.086 λ, 4.6 Ω 8.23 x 27.89 0.061 λ, 9.4 Ω 5.97 x 12.62 0.011 λ, 50.0 Ω 1.14 x 1.47 0.056 λ, 50.0 Ω 6.10 x 1.47 0.010 λ, 50.0 Ω 1.07 x 1.47 2 oz. copper, both sides Dimensions: L x W (in.) 0.185 x 0.058 0.500 x 0.073 0.062 x 0.073 0.048 x 0.298 0.200 x 0.598 0.794 x 0.038 1.238 x 0.035 1.238 x 0.035 0.097 x 1.098 0.324 x 1.098 0.235 x 0.497 0.045 x 0.058 0.240 x 0.058 0.042 x 0.058 1Electrical Characteristics are rounded. Data Sheet 5 of 12 Rev. 04, 2008-02-13 PTF141501E Reference Circuit for 1500 MHz (cont.) R5 C5 R4 R3 C3 C1 10 35V R2 LM QQ1 C2 C10 C11 R6 C6 R7 L1 Q1 10 35V + R1 C12 R5 C5 R4 R3 C3 C1 C13 RF_OUT C16 C8 C9 C17 C18 VDD C20 C19 C7 VDD VDD C4 10 + 35V R2 LM QQ1 C2 + RF_IN + C4 VDD R6 C6 R7 L2 10 35V C15 C14 R1 Q1 141501ef-1500_dtl 141501ef-1500_assy Reference circuit (not to scale)* Component C1, C2, C3 C4, C13, C17 C5, C12, C16 C6 C7 C8 C9 C10, C14 C11, C15 C18 C19 C20 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5, R7 R6 Description Capacitor, 0.001 µF, 50 V, 0603 Capacitor, 10 µF, 35 V, SMD Capacitor, 0.1 µF, 50 V, 1206 Capacitor, 7.5 pF Capacitor, 33 pF Capacitor, 0.3 pF Capacitor, 2.4 pF Capacitor, 13 pF Capacitor, 1 µF, 50 V Capacitor, 0.7 pF Capacitor, 33 pF Capacitor, 0.3 pF Ferrite, 6 mm Transistor Voltage regulator Resistor, 1.2 k-ohms, 1/10 W, 0603 Resistor, 1.3 k-ohms, 1/10 W, 0603 Resistor, 2 k-ohms, 1/10 W, 0603 Potentiometer, 2 k-ohms, 0.25 W Resistor, 5.1 k-ohms, 1/4 W, 1206 Resistor, 10 ohms, 1/4 W, 1206 Suggested Manufacturer Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC ATC Digi-Key ATC ATC ATC Philips Infineon Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key P/N or Comment PCC1772CT-ND PCS6106TR-ND, Tant. TE Series P4525-ND 100A 7R5 100A 330 100A 0R3 100A 2R4 100B 130 19528-ND 100B 0R7 100B 330 100B 0R3 53/3/4.6-452 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KGCT-ND 3224W-202ETR-ND P5.1KECT-ND P10ECT-ND *Gerber files for this circuit are available on request. Data Sheet 6 of 12 Rev. 04, 2008-02-13 PTF141501E Alternate Application for 1600 MHz Typical Performance Frequency Sweep, 1.6 – 1.7 GHz CW Power Sweep (1600 MHz application circuit) VDD = 28 V, IDQ = 1.2 A VDD = 28 V, IDQ = 1.2 A, f = 1675 MHz 50 Gain (dB) Gain 30 15 20 14 Efficiency 13 0 20 40 60 10 16 Gain (dB) 40 16 17 Drain Efficiency (%) 17 15 14 0 80 100 120 140 160 180 13 1580 1600 1620 1640 1660 1680 1700 1720 Output Power (W) Frequency (MHz) 2-Tone Drive-up at Optimum Current VDD = 28 V, IDQ = 1.2 A, f1 = 1675 MHz, f2 = 1676 MHz 0 35 -10 Efficiency IMD (dBc) -20 30 25 -30 20 3rd Order -40 15 5th 7th -50 -60 10 5 -70 0 20 40 60 80 0 100 Output Power (W) Average Data Sheet 7 of 12 Rev. 04, 2008-02-13 PTF141501E Broadband Circuit Impedance, 1600 MHz Z Source Ω Frequency 0.1 0.0 D LOA D S T OW AR jX 1600 9.5 –5.6 0.9 –5.8 1625 9.6 –5.2 0.8 –5.4 1650 9.8 –5.0 0.8 –5.2 1675 9.9 –4.7 0.8 –5.0 1700 10.0 –4.4 0.8 –4.8 Z0 = 50 Ω Z Source Z Load NGT H - W AV S R 0.5 G jX 0.4 Z Load R 0.3 Z Source Z Load Ω MHz 0.2 D 1700 MHz 1600 MHz 1600 MHz